?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com FGB7N60UNDF rev. c0 FGB7N60UNDF 600 v, 7 a short circuit rated april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature thermal characteristics notes: 2: mounted on 1? square pcb (fr4 or g-10 material) symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage ? 20 v i c collector current @ t c = 25 o c14 a collector current @ t c = 100 o c7 a i cm (1) pulsed collector current @ t c = 25 o c 21 a i f diode forward current @ t c = 25 o c7 a p d maximum power dissipation @ t c = 25 o c83 w maximum power dissipation @ t c = 100 o c33 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case 1.5 o c / w r ? jc (diode) thermal resistance, junction to case 3.5 o c / w r ? ja thermal resistance, junction to ambient (pcb mount)(2) 40 o c / w g c e collector (flange) to-263ab/d 2 -pak e g c FGB7N60UNDF 600 v, 7 a short circuit rated igbt features ? short circuit rated 10 us ? high current capability ? high input impedance ? fast switching ?rohs compliant applications ? sewing machine, cnc, home appliances, motor control general description using advanced npt igbt technology, fairchild ? ?s the npt igbts offer the optimum performance for low-power inverter- driven applications where low-lo sses and short-circuit rugged- ness features are essential, such as sewing machine, cnc, motor control and home appliances.
FGB7N60UNDF 600 v, 7 a short circuit rated ?2011 fairchild semiconductor corporation 2 www.fairchildsemi.com FGB7N60UNDF rev. c0 package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package rel size tape width quantity FGB7N60UNDF FGB7N60UNDF to-263ab/d2-pak - 50 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 ? a 600 - - v i ces collector cut-off current v ce = v ces , v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 10 ua on characteristics v ge(th) g-e threshold voltage i c = 7ma, v ce = v ge 5.5 6.8 8.5 v v ce(sat) collector to emitter saturation voltage i c = 7a , v ge = 15v -1.92.3v i c = 7a , v ge = 15v, t c = 125 o c -2.1- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 275 pf c oes output capacitance - 41 pf c res reverse transfer capacitance - 10 pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 7a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 o c -5.9 ns t r rise time - 4.2 ns t d(off) turn-off delay time - 32.3 ns t f fall time - 68 89 ns e on turn-on switching loss - 99 uj e off turn-off switching loss - 104 uj e ts total switching loss - 203 uj t d(on) turn-on delay time v cc = 400v, i c = 7a, r g = 10 ? , v ge = 15v, inductive load, t c = 125 o c -6 ns t r rise time - 4.3 ns t d(off) turn-off delay time - 33.8 ns t f fall time - 113 ns e on turn-on switching loss - 181 uj e off turn-off switching loss - 144 uj e ts total switching loss - 325 uj t sc short circuit withstand time v cc = 350v, r g = 10 ?? , v ge = 15v, t c = 150 o c 10 us
FGB7N60UNDF 600 v, 7 a short circuit rated ?2011 fairchild semiconductor corporation 3 www.fairchildsemi.com FGB7N60UNDF rev. c0 electrical characteristi cs of the igbt t c = 25c unless otherwise noted electrical characteristi cs of the diode t c = 25c unless otherwise noted q g total gate charge v ce = 400v, i c = 7a, v ge = 15v -18-nc q ge gate to emitter charge - 3 - nc q gc gate to collector charge - 13 - nc symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 7a t c = 25 o c- 1.7 2.2 v t c = 125 o c- 1.6 t rr diode reverse recovery time i f =7a, di f /dt = 200a/ ? s t c = 25 o c - 32.3 ns t c = 125 o c- 70 q rr diode reverse recovery charge t c = 25 o c- 59 nc t c = 125 o c - 172 -
FGB7N60UNDF 600 v, 7 a short circuit rated ?2011 fairchild semiconductor corporation 4 www.fairchildsemi.com FGB7N60UNDF rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level 0.0 1.5 3.0 4.5 6.0 7.5 9.0 0 10 20 30 20v 17v t c = 25 o c 15v v ge = 12v collector current, i c [a] collector-emitter volta g e , v ce [ v ] 0.0 1.5 3.0 4.5 6.0 7.5 9.0 0 10 20 30 20v 17v t c = 125 o c 15v v ge = 12v collector current, i c [a] collector-emitter volta g e , v ce [ v ] 0123456 0 5 10 15 20 25 30 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0 3 6 9 12 15 0 10 20 30 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 3.5a 7a 14a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 3.5 14a 7a i c = 3.5a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c]
FGB7N60UNDF 600 v, 7 a short circuit rated ?2011 fairchild semiconductor corporation 5 www.fairchildsemi.com FGB7N60UNDF rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. gate resistance gate resistance 48121620 0 4 8 12 16 20 i c = 3.5a 7a 14a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 110 10 100 1000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 5 10 15 20 0 3 6 9 12 15 common emitter t c = 25 o c 400v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 1ms 10 ms dc 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 30 0 102030405060 0.1 1 10 100 common emitter v cc = 400v, v ge = 15v i c = 7a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 0 102030405060 10 100 common emitter v cc = 400v, v ge = 15v i c = 7a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 300
FGB7N60UNDF 600 v, 7 a short circuit rated ?2011 fairchild semiconductor corporation 6 www.fairchildsemi.com FGB7N60UNDF rev. c0 typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. switching loss vs. figure 16. switching loss vs gate resistance collector current figure 17. turn off switching figure 18. forward characteristics soa characteristics 02468101214161820 10 100 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [ a ] 500 02468101214 0.1 1 10 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] collector current, i c [ a ] 30 0 5 10 15 20 10 100 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c e on e off switching loss [uj] collector current, i c [a] 1000 0 102030405060 100 1000 common emitter v cc = 400v, v ge = 15v i c = 7a t c = 25 o c t c = 125 o c e on e off switching loss [uj] gate resistance , r g [ ? ] 50 0123 t j = 75 o c 30 10 1 t j = 25 o c t j = 125 o c forward voltage, v f [v] forward current, i f [a] 0.2 1 10 100 1000 1 10 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 30
FGB7N60UNDF 600 v, 7 a short circuit rated ?2011 fairchild semiconductor corporation 7 www.fairchildsemi.com FGB7N60UNDF rev. c0 typical performance characteristics figure 19. reverse recovery current figure 20. stored charge figure 21. reverse recovery time figure 22.transient thermal impedance of igbt 50 200 400 600 1e-4 1e-3 0.01 0.1 1 10 100 reverse current , i r [ ? a] reverse voltage, v r [v] t j = 125 o c t j = 25 o c t j = 75 o c 02468 0.00 0.05 0.10 0.15 0.20 t c = 25 o c t c = 125 o c 200a/ ? s di/dt = 100a/ ? s stored recovery charge, q rr [ns] forward current , i f [ a ] 200a/ ? s di/dt = 100a/ ? s 0246810 0 50 100 t c = 25 o c t c = 125 o c 200a/ ? s di/dt = 100a/ ? s reverse recovery time, t rr [nc] forward current , i f [ a ] 200a/ ? s di/dt = 100a/ ? s 0.00001 0.0001 0.001 0.01 0.1 0.01 0.1 1 2 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGB7N60UNDF 600 v, 7 a short circuit rated ?2011 fairchild semiconductor corporation 8 www.fairchildsemi.com FGB7N60UNDF rev. c0 to-263ab/d 2_ pak mechanical dimensions
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